Design of a high-performance brokaw band-gap reference

A high-performance CMOS band-gap reference (BGR) is designed in this paper. The proposed circuit employs the current-mode architecture optimized for low supply voltage applications. The key portion of the circuit employs the Brokaw BGR architecture, in which a three-stage operational amplifier is adopted to get high PSRR and only first-order temperature compensation technology is employed to get a low temperature coefficient. The circuit is on the Chartered 0.18 μ m CMOS process under the operating voltage of 1.8V and its simulation results are presented. The simulation results show that the temperature coefficient is 9 ppm/°K over the −40°C to 125°C temperature range and the fluctuation of reference voltage is within 0.067m V when the power voltage changes from 1.44V to 2.16V. In addition, the PSRR is 108.5dB at 10 kHz, and the power consumption is only 0.355mW
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