Design of a CMOS transducer interface for an UV silicon sensor

This paper presents the cointegration of an UV silicon sensor with extended responsivity, and its conditioning circuit. The sensor's output current is converted to a digital code for subsequent processing. Post-layout results shows a suitable response in order to obtain a digital code corresponding to sensor photocurrent in the range of 200 to 1100nm. The circuit has been designed in a CNM 2.5μm CMOS technology.