I. Introduction
Recently more and more terahertz (THz) technology development and applications had been reported [1]–[2]. To date the state-of-art CMOS foundry-based RF components, however, had rarely been studied for terahertz electronics except in few literatures [3]–[4]. CMOS technology has the following advantages: various levels of circuit components from RF building blocks to the signal processing units can be integrated in a single chip; the photolithography accuracy is high enough for implementing the electromagnetic passive devices at micron wavelength level ; CMOS technology is mass-production ready. To overcome the limit of (maximum oscillation frequency) of CMOS devices [3], we present a thermal sensor approach to the detection of THz electromagnetic signals impinging on the CMOS chip, thus extending the typical 1P6M CMOS technology, with at 65GHz typically, to the detection of 28.3 THz electromagnetic radiation using on-chip PTAT (Proportional- To-Absolute-Temperature) thermal sensing circuit [5] properly incorporated into the receiving antenna/resonator design.