Characterization of miniature near field probes for IC's radiation measurements

In this paper, the near-field scan bench developed at Electronics Laboratory at ENSEEIHT is presented. A simple methodology for calibrating the miniature probes is described, which allows to determine the electromagnetic radiation levels from an IC without needing fastidious post-processing calculations. Then, the near-field emissions from a imager integrated circuit are measured and analyzed. Scan results give accurate information about current flows and voltage drops and parasite coupling inside the component.