A Lateral Power MOSFET With the Double Extended Trench Gate

A lateral power MOSFET with the double extended trench gate (DETG) is proposed in this letter. The double extended gate introduces the additional charges into the drift region and the substrate; then, the electric field distribution of the device is optimized to improve the breakdown voltage (BV) and the specific on-resistance (R
_{on, sp}
). Simulation results show that the BV of the DETG structure is increased from 126 V of the conventional trench gate (CTG) structure to 171 V with the same length and thickness of the drift region. Furthermore, its R
_{on, sp}
is nearly 64% less than that of the CTG structure.