High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels

For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ~ 190 mV/dec, and a high on/off current ratio (I
_ON
/I
_OFF
)>; 10
⁶
(V
_D
=1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ~ 148 mV/dec and I
_ON
/I
_OFF
~ 10
⁷
. After NH
₃
plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ~ 132 mV/dec, higher (I
_ON
/I
_OFF
)>; 10
⁷
, and threshold voltage (V
_TH
) ~ 0.036 V.