Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells

Temperature-sensitive voltages are derived from current–voltage characteristics of an InGaP–(In)GaAs–Ge triple-junction solar cell biased at various current densities in the dark and under irradiation. Dynamic measurements of cell temperatures were performed with a solar simulator by alternately permitting and blocking the sunlight. An initial temperature increasing rate of 1
$^{\circ}\hbox{C/s}$
was determined for the solar cell exposed to 1-sun light intensity of 100
$\hbox{mW} \cdot \hbox{cm}^{-2}$
. Furthermore, the times required for increases of 5
$^{\circ}\hbox{C}$
, 10
$^{\circ}\hbox{C}$
, and 15
$^{ \circ}\hbox{C}$
in the cell temperature were 7, 21, and 48 s, respectively. Experimentally estimated cell temperature was finally stabilized at
$\hbox{48}\ ^{\circ}\hbox{C} \pm \hbox{0.5}\ ^{\circ}\hbox{C}$
.