Monolithic Integration of a 4H-Silicon Carbide Vertical JFET and a JBS Diode

In many applications, it is desirable to integrate a power switch with an antiparallel diode on the same chip. In this letter, the monolithic integration of a silicon carbide vertical junction field-effect transistor (VJFET) with a junction barrier Schottky (JBS) diode is achieved, and the device is characterized at high voltage. The fabrication process involves no additional steps to that of the VJFET. The VJFET integrated with the JBS diode is measured up to 834 V when turned off and has a specific on-state resistance of 7.8 mΩ · cm
²
at 100 A/cm
²
when turned on. In addition to validating the high-voltage integration of the freewheeling diode with the power switch, reverse conduction shown here through the integrated diode and the JFET channel can be used in synchronous rectification to significantly reduce the device conduction loss.