A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure

A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage (
V
_oc
). The measured
V
_oc
is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm
²
). This
V
_oc
is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the
V
_oc
enhancement of MIS solar cells by using a stacking structure.