A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage

In this letter, we propose a new trench-gate power MOSFET with buried oxide in its drift region that shows an improvement in the breakdown performance as compared to the conventional trench device due to a reduction in the vertical electric field. In addition, the proposed device shows about linear relation between the BV and
R

_ON
as compared to the 2.5th power relation in the conventional device.