P-Channel Germanium FinFET Based on Rapid Melt Growth

High-performance P-channel Ge FinFETs have been fabricated based on the rapid-melt-growth method. The fully depleted Ge FinFET has an off-state drain leakage current that is two orders of magnitude lower than the partially depleted one. The channel on the {110} surfaces provides an enhancement of the effective hole mobility of 60% and 28% at an effective field of 0.4 MV/cm compared with, respectively, silicon universal hole mobility and our previous work with {100} Ge-on-insulator pMOSFETs.