In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. The 77-K peak responsivity was 5.6 mA/W with the detectivity D/sup */ of 1.2×10/sup 9/ cm/spl middot/Hz
¹
2//W at the bias of 0.4 V.