Very-shallow low-resistivity p+-n junctions for CMOS technology

Shallow p-n junctions 110 nm deep have been fabricated using rapid thermal diffusion from a spin-on oxide source. Surface concentrations greater than 3 × 10
²⁰
cm
^-3
are possible, with sheet resistivities less than 100 Ω/sq and a maximum reverse-bias leakage at 5 V of 3 nA.cm
^-2
. Results from 150-nm junctions are also given and are compared with BF
2
ion implantation.