A self-aligned In0.53Ga0.47As junction field-effect transistor grown by molecular beam epitaxy

An In
0.53
Ga
0.47
As field-effect transistor has been fabricated on MBE-grown material, using a novel self-alignment technique. This device has a dc transconductance of 60 mS/mm for a 3-µm gate length, one of the highest reported figures for such a length, and a very low gate leakage of 100 nA at -3-V gate bias.