High-/spl kappa/ Ir/TiTaO/TaN capacitors suitable for analog IC applications

We have developed novel high-/spl kappa/ Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm
²
), small leakage current at 2 V (1.2×10/sup -8/ A/cm
²
), and low voltage linearity of the capacitance (89 ppm/V
²
). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high /spl kappa/ (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.