Degradation of III–V inversion-type enhancement-mode MOSFETs

We performed gate ramp voltage stress on III-V InGaAs based MOSFETs. Stress induces trapped charge and it also leads to interface trap generation, which has detrimental effects on the subthreshold slope and on the transconductance. At high electric fields, before the hard breakdown, a very low-frequency high-current random telegraph noise appears at the gate, which seems to be not correlated with the soft breakdowns commonly observed in other devices.