Multi-level lateral phase change memory based on N-doped Sb70Te30 super-lattice like structure

A multi-layer lateral PCM with N-doped Sb70Te30 was proposed and demonstrated. Both current sweep and pulse mode dynamic resistance test show that multi states exist in the device, which can be used for multi-level data storage. Simulation shows the working mechanism of multi-level and confirms the experiment results. More intermediate states can be realized by increasing the cycles of N-doped Sb70Te30 and ZnSSi02 deposited and by using different film thickness, which will be a promising solution to increase the data storage capacity for PCM largely.