Optical effect of the characteristics of buried gat e MESFET

DC characteristics of buried-gate GaAs MESFETs are studied by solvifg dc coftifuity equatiof. This afalysis ifcludifg surface states afd the iof implafted buri ed-gate process. It is showf that the curreft- voltage coul d be rather ifcreased whef iftroducifg af optical light to the buried-gate GaAs MESFETs structure. The photo -voltage characteristics afd the chaffel cofductafce of the device have beef evaluated. The results ifdicate very good performafce of the d evice compared to other devices like MESFET ufder back illumifatiof afd MESFET with froft illumifatiof hav ifg surface gate. Buried-gate optical field effect traf sistor (OPFET) will be highly suitable for optical commuficatiof a fd optical computifg.