Simulation study of 3-D gamma-ray imager with Si/CdTe semiconductor Compton camera

A semiconductor Compton camera with wide-band imaging capability and high energy resolution is expected to provide new in-vivo data that enables tracking of multiple RI-labeled molecular probes. In our previous works, we have constructed prototype Compton cameras composed of Si and CdTe semiconductor detectors, and demonstrated wide-band imaging of 60-662 keV gamma-rays with a spatial resolution on the order of millimeters for a 2-D target. The feasibility of 3-D imaging is studied by Monte Carlo simulations that were validated in our previous work, in order to apply this camera to in-vivo molecular imaging and clinical use.