New degradation mechanisms and reliability performance in tunneling field effect transistors

Tunneling n-FET reliability performance is studied for the first time by physical analysis and experimental measurements. (1) A new degradation mechanism by interface trap induced change of tunneling field and current I
d
is demonstrated. (2) Under PBTI or HC stress, there is a strong peak of vertical electric field E
x
at the gate/source overlapping region due to the P
⁺
doping of the source, inducing high interface trap degradation. These explain the large PBTI and HC degradation, very different from those observed in conventional n-MOSFETs.