64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology

In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of −3.4 dBm at 79 GHz. It is designed using an 0.8 µm SiGe HBT technology with f
T
/f
max
of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. −4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors' knowledge, a frequency generation IC operating so close to f
max
with comparably wide tuning range and high output power has not yet been reported.