Room temperature behavior of poly-silicon quantum dot single electron transistors

For room temperature operation and reproducibility of single electron transistors (SETs), we propose a fabrication method of an SET with a self-aligned quantum dot. The quantum dot is formed by the selective etch of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon. The device is named as a PQD-SET, i.e., poly-silicon quantum dot single electron transistor. PQD-SET shows clear Coulomb oscillation at room temperature.