Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation

Electrical characterization of 4H-SiC epitaxial MOS devices using current-voltage (I-V), capacitance-voltage (C-V), and thermally stimulated current (TSC) measurements are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.