I. Introduction and Background
THE GaAs-based Schottky diode (SD) is one of the most critical element in heterodyne receivers operating at millimeter and sub-millimeter wavelengths of the electromagnetic spectrum [1]. At such high frequencies, the performance of a GaAs Schottky diode is limited by the parasitic elements, particularly the series resistance and junction capacitance [2]. These parasitic elements include the extrinsic parasitic elements which are contributed by the geometry of SD chip [3], [4]. Thus, appropriate modeling of the SD parasitic elements is very crucial in optimizing the diode performance and meeting the design goals.