Abstract:
Electromigration in flip-chip bumps of Sn3.0Ag0.5Cu has been studied at current density of 2.03times104 A/cm2. Three potential failure modes induced by electromigration i...Show MoreMetadata
Abstract:
Electromigration in flip-chip bumps of Sn3.0Ag0.5Cu has been studied at current density of 2.03times104 A/cm2. Three potential failure modes induced by electromigration in SnAgCu flip-chip bumps were investigated in terms of microstructural evolution. According to IPC standard or U.S. Military Standard (MIL-STD), all theses three kinds of damages would be determined failure in failure-analysis procedures for microcircuits.
Published in: 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Date of Conference: 06-10 July 2009
Date Added to IEEE Xplore: 04 September 2009
ISBN Information:
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