Comprehensive physics-based breakdown model for reliability assessment of oxides with thickness ranging from 1 nm up to 12 nm

The state-of-art understanding on the T
_BD
voltage acceleration models in direct tunneling (DT) and Fowler-Nordheim (FN) regimes is thoroughly and carefully reviewed including recent work on thin oxides as well as historical publication database for thick oxides. The field-driven T
_BD
exponential law is found to be inconsistent with many experimental findings. We present a comprehensive physics-based breakdown model, which separately takes the roles of tunneling current and defect generation efficiency into account, and it is consistent with many experimental findings for thickness from 1.0 nm to 12 nm. With these new advanced understandings, we can now resolve many controversies surrounding T
_BD
voltage acceleration models for SiO
₂
-based dielectrics. Finally, a practical solution of acceleration model for TDDB qualification is proposed.