Abstract:
Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences ...Show MoreMetadata
Abstract:
Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences of critical radius of the terrace for nucleation of new island were measured. On the base of the obtained data the adatom diffusion length on the Si(111) surface was estimated at temperature range 1000 - 1300degC.
Published in: 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices
Date of Conference: 01-06 July 2009
Date Added to IEEE Xplore: 24 July 2009
Print ISBN:978-1-4244-4571-4
Print ISSN: 1815-3712