The kinetics of negative 2D-islands on Si (111) surface during sublimation

Kinetics of two dimensional islands on Si(111) was investigated by in situ ultrahighvacuum reflection electron microscopy during sublimation. The temperature dependences of critical radius of the terrace for nucleation of new island were measured. On the base of the obtained data the adatom diffusion length on the Si(111) surface was estimated at temperature range 1000 - 1300degC.