Dynamic models for predicting the thermal behavior of vertical MOSFET transistors under pulsed conditions

This paper describes a method for calculating the thermal resistance of a vertical MOSFET power amplifier. The method for measuring the thermal resistance under a given set of input conditions is given. From this data a thermal transient model with the thermal resistance and capacitance parameters is created. This model can be utilized to determine the thermal resistance of any input signal condition. This model compares well to a physical based, finite element model that is used to investigate physical changes to the device structure.