Switching and memory effects in phosphorus-ion-implanted ZnSe devices

Switching and memory effects have been observed in diodes fabricated from phosphorus-implanted ZnSe. The materials having a carrier concentration of about 10
¹⁸
cm
^-3
were implanted at 90 keV to an ion dose of 10
¹⁶
cm
^-2
. The switching and memory phenomena are interpreted in terms of filling and emptying of the trapping centers in the implanted p-type layer.