Efficiency and optimum DC bias field for second harmonic generation due to hot electrons in semiconductors

The efficiency of the yield of second harmonics in non-polar nondegenerate semiconductors is estimated. For n-Ge and n-Si an efficiency of about 5 percent is obtained for the optimum bias field, about V
0
/µ
0
. In this estimation a hyperbolic equation describing the nonlinear velocity-electric field relations is assumed.