Electron beam fabrication of submicrometer diameter mixer diodes for millimeter and submillimeter wavelengths

Using an electron beam fabrication technique, GaAs Schottky barrier diodes have been produced with submicrometer dimensions, which is a considerable reduction in size over that attainable using conventional photoresist techniques. This advancement should improve the performance of Schottky barrier mixers and detectors at millimeter wavelengths and extend their use to submillimeter wavelengths.