A comparative study of IMPATT diode noise properties

The amplifier and oscillator noise properties of IMPATT diodes fabricated with diffused and epitaxial p
⁺
-n junctions in both Si and GaAs have been measured. Circuit parameters which effect noise have been held constant in order to obtain a valid comparison. The GaAs epitaxially grown junction p
⁺
-n diodes were found to have the best noise properties.