Titanium-dioxide dielectric films prepared by vapor reaction

The high dielectric constant of TiO
2
and its low sensitivity to temperature and frequency make TiO
2
attractive for integrated electronic applications. The most useful technique for preparing titanium-dioxide films on semiconductors and metals is the vapor reaction process. The apparatus developed for film preparation is described, and effects of deposition conditions are discussed. Uniform films are obtained over large areas and film thickness is readily controlled. Films have dielectric constants up to 82 and dissipation factors between 0.008 and 0.03 at 1 kc and a dc leakage resistivity of 5×10
¹²
ohm/cm. The dielectric constant is relatively frequency insensitive into the gigacycle range.