I. Introduction
Silicon MOSFETs may reach the scaling limit, if reliable low leakage sub-0.5 nm equivalent oxide thickness (EOT) gate dielectrics are not realized [1]. In this scenario, III-V semiconductors are investigated as alternative channel material because of their low electron effective mass and thus high electron velocities (v). is a leading candidate because of the experimentally observed high electron velocities in InGaAs channel HEMTs [2]. Besides the low electron effective mass, InGaAs has large inter-valley separations (0.5 eV for which means high velocities even under high applied fields. This ensures no degradation in electron transport properties in a high field drain region encountered in scaled MOSFETs.