Design of Class F-1 Power Amplifier Using GaN pHEMT for Industrial Applications

This work presents a Class F
^-1
power amplifier (PA) operating at 2.35 GHz. An output power of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was measured to be 60.8% (PAE = 55.7 %). The power amplifier was implemented using GaN pHEMT. The realization of the optimum load resonator was designed by a microstrip resonator, for the first four harmonics. The resonator achieves an optimum load for the transistor at the fundamental frequency.