AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD

Metamorphic Al
_0.50
In
_0.50
As/Ga
_0.47
In
_0.53
As high electron mobility transistors (mHEMT) grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates have been successfully demonstrated for the first time. The grown structures exhibited 2-DEG mobilities over 4500 cm
²
/V-s, with sheet carrier densities larger than 8 times 10
¹²
cm
^-2
at room temperature. A 1.0-mum transistor exhibits a maximum transconductance of 587 mS/mm. The cut off and maximum oscillation frequencies were 32.3 and 44 GHz, respectively.