Scaling of In0.7Ga0.3As buried-channel MOSFETs

Sub-100 nm short-channel In
_0.7
Ga
_0.3
As MOSFETs are demonstrated for both depletion- and enhancement-mode devices. High current of 960 muA/mum and record transconductance of 793 muS/mum have been achieved. Scaling behavior is investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.