190V N-channel lateral IGBT integration in SOI 0.35 µm BCD technology

The integration of 190 V N-Ch. ateral IGBT in SOI 0.35 mum shrunk BCD technology is described in this paper. LIGBT design optimization by simulation and silicon characterization data are here reported, highlighting the superior current capability of LIGBT with respect to equivalent power MOS. Behavior during high temperature reverse bias (HTRB) test was investigated and basic IGBT structure modified to minimize the stress induced effects. The novel device shows a very high saturation current (around 2.5 kA cm
^-2
) and excellent electrical parameter stability after HTRB stress test.