Single Ended Static Random Access Memory for Low-Vdd, High-Speed Embedded Systems

Single-ended static random access memory (SE-SRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a novel six-transistor (6T) SE-SRAM bitcell for low-V
_dd
and high speed embedded applications with significant improvement in their power, performance and stability under process variations. The proposed design has a strong 2.65times
worst

case
read static noise margin (SNM) compared to a standard 6T SRAM. A strong write-ability of logic 'one' is achieved, which is problematic in SE-SRAM cells even at lower voltage. The proposed bitcell design is mainly targeted for word-organized SRAMs. A 16 times 16 times 32 bit SRAM with proposed and standard 6T bitcells is simulated (including parasitics) for 65 nm CMOS technology to evaluate and compare the different performance parameters, such as, read SNM, write-ability, access delay and power. The dynamic and leakage power dissipation in the proposed 6T design is reduced by 28% and 21%, respectively, as compared to standard 6T design.