Characterization of SiPM: Temperature dependencies

Within RAPSODI
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novel types of Silicon Photo-Multiplier (SiPM) from different suppliers were investigated. The main parameters: dark count rate, amplification, dynamic range, quantum detection efficiency and optical cross-talk have been studied to qualify the detectors. Results demonstrate the possibility to apply this detection technology to intense photon fluxes detection as well as to low plurality ones. Characterization protocol for a full SiPM qualification was developed. The most important result is the demonstration of temperature independence of SiPM gain versus over voltage.