GaN MMIC Power Amplifiers for S-band and X-band

The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 μ m HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W.