Analysis of high performance RF integrated passive circuits using the glass substrate

This paper describes the design, modeling, simulation, and fabrication of wafer level integrated passive devices (IPDs). These IPDs, comprising of a resistor, capacitor, and inductor, have been developed in the thin-film and thick merallization processing technology on silicon or high-resisitivity substrate. The electrical equivalent model of the single componenet structures is presented for design and scalable modeling, and the accurance is demonstrated by measurement. The fabrication method, new circuit design and materials of these devices or substrate lead to improve characteristics suitable for application in high-frequency RF module or system. The fabricated balanced-BPF have insertion loss less than 2.0dB with die size of 2.1mm by 1.4mm for band range (2300MHz–2700MHz).