Simultaneous achievement of high-speed and low-noise performance of pseudomorphic InGaAs/InAlAs HEMTs

We achieved a minimum noise figure (NFmin) of 1.0 dB at a frequency of 90 GHz, a current gain cutoff frequency (f
T
) of 520 GHz and a maximum oscillation frequency (f
max
) of 425 GHz for a 35-nm-gate pseudomorphic In
0.7
Ga
0.3
As/In
0.52
Al
0.48
As high electron mobility transistor (HEMT) biased at a drain-source voltage (V
ds
) of 0.8 V and a gate-source voltage (V
gs
) of 0.0 V. The simultaneous achievement of high f
T
, high f
max
and low NF
min
is the first demonstration for InGaAs/InAlAs HEMTs with over 500-GHz-f
T
. Furthermore, an NF
min
of 0.8 dB at 90 GHz was also obtained at V
ds
= 0.8 V and V
gs
= −0.1 V, which is one of the lowest values ever reported.