X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of both MMICs have been designed in the Alcatel-Thales III-V lab AlGaN/GaN microstrip technology. One chipset version operates at X-band and the second also shows wideband performance. Input power handling of >46 dBm for the switch and >41 dBm for the LNA have been measured.

I. Introduction

The wide bandgap semiconductor technology Gallium-Nitride (GaN) is well known for its high power density and many High Power Amplifier designs [1] [2]. Because of the large breakdown voltage of HEMT device realized in the A1GaN/GaN technology, it is also possible to use this technology to design robust receiver components. GaN technology has already shown the capability for low noise performance [3], and even with a technology optimized for high-power applications, good and robust Low Noise Amplifiers (LNA) can be realized [4] [5]. Because of the high power handling also switches can be designed that could replace the current ferrite circulators in Transmit/Receive (TR) modules [6]. This paper will present the design and first iteration measurement results on two LNA and two switch MMICs, which can be used to realize a robust receiver front end. First in section II the application of these MMICs in a TR module front-end is described. Section III gives details on the A1GaN/GaN processing technology. Next the LNA and switch designs are described, followed by the measurement results on these MMICs.