SiGe HBTs featuring fT ≫400GHz at room temperature

This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak f
_T
values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.