Buried aluminum nitride insulator for improving thermal conduction in SOI

A new Si-on-AlN substrate has been fabricated and characterised both electrically and thermally. Thermal properties of the new substrate have been identified with a thermal resistance reduced by half to 47.5 K/W compared to reference SOI. Further improvements in fabrication of these new SOI substrates with regard to the alpha-Si layer, oxide layer and in AlN film quality itself would utillise the thermal conductivity of AlN even more.