Fabrication of silicon-on-insulator wafer by SIMOX layer transfer

In summary, an improved process named SIMOX layer transfer is proposed. SOI wafer with the device layer thickness of 147.5plusmn3.1 nm has been fabricated with SLT process. SE result indicates that the device layer has excellent thickness uniformity. The results of TEM show sharp interfaces and defect-free device layer, revealing the perfect structure of SLT SOI.