Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.