Electro-thermal simulation of a 100 A, 10 kV half-bridge SiC MOSFET/JBS power module

This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II program and will be used in the 13.8 kV, 2.75 MVA SSPS developed in the HPE Phase III program. The simulations are performed using recently developed and validated physics-based electrical and thermal models. The total device active areas and the various gate resistances and inductances are optimized in order to minimize overall power dissipation. A detailed description of the loss mechanisms and the simulation results for a representative SSPS topology is also presented.

I. Introduction

Recent breakthroughs in Silicon Carbide (SiC) material and fabrication technology have led to the development of High-Voltage, High-Frequency (HV-HF) power devices with 10 kV, 20 kHz power switching capability [1]. The goal of the Defense Advanced Research Projects Agency (DARPA) Wide Bandgap Semiconductor - High Power Electronics (WBGS-HPE) Phase II program is to develop 100 A, 10 kV SiC half-bridge power modules required to demonstrate the 13.8 kV, 2.75 MVA Solid State Power Substation (SSPS) in the DARPA WBGS-HPE Phase III program [2].