Physics based current and capacitance model of short-channel double gate and gate-all-around MOSFETs

We present a precise two-dimensional current and capacitance model for nanoscale double gate and gate-all-around MOSFETs covering a wide range of operating regions, geometries and material combinations. The modeling in the sub-threshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2D Poissonpsilas equation. The results are in excellent agreement with numerical simulations.